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| PROCESS CPD76V Schottky Diode 1.0A Schottky Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 32 x 32 MILS 7.1 MILS 26 x 26 MILS Al - 20,000A Au - 12,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 10,915 PRINCIPAL DEVICE TYPES CMLSH1-40 1N5817 1N5818 1N5819 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (8 -April 2005) |
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